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| Preliminary Data Sheet 2.1 FMS2013 SPDT GaAs High Isolation Absorptive Switch DC-4 GHz Features: Available as RF Known Good Die Excellent low control voltage performance Excellent harmonic performance Very high isolation >49dB typ. up to 4GHz Very low Tx Insertion loss <1.0 dB at 4GHz Functional Schematic RF01 V2 V1 RFIN RF02 Description and Applications: The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated using the Filtronic FL05 0.5m switch process technology which offers market leading performance optimised for switch applications. Electrical Specifications: Parameter Tx Insertion Loss Rx Insertion Loss Return Loss VSWR On State VSWR Off State Isolation at 4 GHz 2nd Harmonic Level (TOP = 25C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50) Test Conditions 4GHz 4GHz 4GHz 4GHz 4GHz 4GHz 3GHz, Pin = 21dBm, Vctrl = 3V 3GHz, Pin = 27dBm, Vctrl = 5V Min Typ 1.0 1.0 15 1:1.3 1:1.4 49 -72 -68 30 Max Units dB dB dB dB dBc dBc ns Switching speed Pin = 21dBm, 10% to 90% RF Note: External DC blocking capacitors are required on all RF ports (typ: 47pF). 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.1 FMS2013 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temperature Storage Temperature Symbol Pin Vctrl TOP TOP Absolute Maximum +30dBm +5V -40C to +100C -55C to +150C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: Vctrl1 High Low Vctrl2 Low High RFIN-RF01 On Off RFIN-RF02 Off On Note: `High' `Low' = >2.5V & <5V = <0.2V Pad and Die Layout: E D C B A H Pad Reference A B Pad Name G1 RFI C2 C1 RFO1 G2 G3 RFO2 Description GND1 RFIN Vctrl1 Vctrl2 RFO1 GND2 GND3 RFO2 Pin Coordinates (m) 159 , 286 159 , 446 159 , 606 159 , 766 757 , 857 757 , 555 757 , 414 757 , 112 F G C D E F G H Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (m) 870 x 970 Die Thickness (m) 150 Min. Bond Pad Pitch (m) 141 Min. Bond pad Opening (m) 94 x 94 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.1 FMS2013 Typical Measured Performance Curves Mounted on Evaluation Board: 2 -20 Off State On State Isolation (dB) 1.8 VSWR 1.6 1.4 1.2 1 0 -30 -40 -50 -60 Isolation (dB) 2 4 Frequency (GHz) 6 -70 0 2 4 Frequency (GHz) 6 VSWR vs. Frequency Isolation vs. Frequency 0 dB(S21) -0.8 -1 Loss (dB) -1.2 -1.4 -1.6 -1.8 20 2 4 6 3V 5V -0.5 Loss (dB) -1 -1.5 -2 3e-005 22 24 26 28 Input Power (dBm) 30 Insertion Loss vs. Frequency Insertion Loss vs. Power 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.1 FMS2013 Evaluation Board: V1 GRD V2 RFO1 C1 C2 C4 C6 C7 RFIN C3 C5 RFO2 Label C1, C2 C3, C4, C5 C6, C7 Component Capacitor, 470pF, 0603 Capacitor, 100pF, 0202 Capacitor, 47pF, 0402 Evaluation Board De-Embedding Data (Measured): 0 -10 S11 (dB) -20 -30 -40 3e-005 S11 (dB) 0 -0.2 Loss (dB) -0.4 -0.6 -0.8 -1 Loss (dB) 2 4 Frequency (GHz) 6 0 2 4 Frequency (GHz) 6 Return Loss vs. Frequency -20 Isolation (dB) -30 Isolation (dB) Insertion Loss vs. Frequency -40 -50 -60 -70 0 2 4 Frequency (GHz) 6 Isolation vs. Frequency 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.1 FMS2013 Ordering Information: Part Number FMS2013-000-WP FMS2013-000-GP FMS2013-000-EB FMS2013-000-FF Description Die - waffle pak Die - gel pak Die mounted on evaluation board Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective results for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com |
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